Scaling in Quantum Transport in Silicon Nano-Transistors
نویسندگان
چکیده
منابع مشابه
Scaling in quantum transport in silicon nano-transistors
We develop a theory for scaling properties of quantum transport in nano-field effect transistors. Our starting point is a one-dimensional effective expression for the drain current in the Landauer-Büttiker formalism. Assuming a relatively simple total potential acting on the electrons the effective theory can be reduced to a scale-invariant form yielding a set of dimensionless control parameter...
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ژورنال
عنوان ژورنال: Solid State Phenomena
سال: 2009
ISSN: 1662-9779
DOI: 10.4028/www.scientific.net/ssp.156-158.517